The investigation of Ag doped metal/HfO2/c-Si structures for electrical properties

In this thesis, pure and silver (Ag) doped HfO2 thin films were coated on p-Si surfaces by sol-gel dipping method; Surface analyzes were examined with X-ray diffraction patterns (XRD) and electrical characterizations were made by taking current-voltage (I-V) measurements at room temperature. Ideality factors (n), saturation current densities (I0) and barrier heights (ϕB) were determined from I-V analyzes of undoped and Ag-doped Al/HfO2/p-Si (MIS) structures at room temperature. The related parameter changes were examined by taking into account the series resistance effects on the structures, and the interfacial state densities were determined. As a result, the effect of doping on electrical parameters in the structures was reported and compared with the literature.