Investigation of electron transport properties in AlGaAs semiconductor compound by monte carlo simulation

Electron transport in semiconductors has received considerable research attention in recent years. The dependence of the applied electric field on the electron drift rate has become the main goal in this type of research. An important characteristic of direct transition semiconductors is that the drift velocity reaches high values as the electric field increases. In indirect transition materials, the maximum drift speed can be expected to take lower values. Gallium Arsenide semiconductor compound is known to be a direct transition semiconductor. By adding aluminum to Gallium Arsenide, a new semiconductor compound, aluminum gallium arsenide, is obtained. Aluminum gallium arsenide is a direct transition material if it contains low amounts of aluminum. However, as the amount of aluminum in the aluminum gallium arsenide compound increases, the material becomes indirectly transitional. Therefore, in this thesis study, how the drift velocity changes with the electric field as the aluminum ratio in the aluminum gallium arsenide material is increased, what type of scattering takes part during this change, and the effect of these scattering on the drift velocity electric field graph is examined for 77K, 300K and 450K temperatures.