Boron doped silicon optical properties

The aim in this study the optical properties of boron doped silicon are examineted by x ray and FTIR spectroscopies.Solid materials consist of crystal structure. Silicon is a material which consist of crystals. When the crystal of silicon is doped with boron, the atoms in the crystal structure bond eachother with covalence. Thus, type-p which is a semiconductor compound is formed. The use spectroscopies methods in the work, reply the question of which molecules absorb which radiation. In this wise, boron doping silicon used in the search absorbed radiation types, absorbans intensity, that is to say through examined spectrum, the structure of molecules are found and absorbans spectroscopies of different radiation types are used so we are informed about the energy gap of example which related to the structure absorbans, transmittans, reflection, indice of diffraction etc. optical properties. By virtue of these properties, nanotechnology whish is implementation scope of these semiconductor compound is used in the battery of sun, transistor, and diode etc. device. The method of Czochralski, optical properties of semiconductor compound are examined. It is important that examine for these implement scope which are usable.