Design and radiation analysis of various analog to digital converters

This study is on the schematic level design of various ADCs and their radiation analysis. In this context, ADCs with three different architectures, which are flash ADC, SAR ADC, and sigma-delta ADC, are designed and tested under temporary and permanent radiation effects. The flash ADC is designed in Verilog-A, which is a modeling language for analog circuits, whereas SAR ADC and sigma-delta modulator are designed by utilizing transistors in 65nm CMOS technology. The designed ADCs are examined under the SET effect, which causes temporary effects on the circuit, and the TID effect, which causes permanent effects. The designed flash ADC is examined only under the effect of TID, and the results of this effect are presented. For the SAR ADC, designs are made using two different capacitive DAC topologies to be able to compare with each other. These SAR ADCs are examined under the effects of TID and SET separately, and the results are explained. As a result of SET simulations of ADCs, the radiation performances of the designed ADCs are compared, and the sensitive nodes of the DACs are determined. In the sigma-delta ADC part, a first-order modulator is designed and investigated under the effects of TID and SET. In addition to the presented results, the sensitive nodes of the integrator are determined, and various inferences are made.