Hot electron based optical sensors

In this study, the ability of a GaAs/ Al0.31Ga0.69As structure with different quantum well widths, designed as Hot Electron Light Emission and Lasing in Semiconductor Heterostructure (HELLISH), is investigated to operate as XOR, NOT, OR, and NAND optical logic gates. The GaAs/ Al0.31Ga0.69As heterojunction structure is designed by placing the GaAs quantum well in the n-side depletion layer between the p-type and n-type Al0.31Ga0.69As layers. GaAs/ Al0.31Ga0.69As epi-layers are grown on semi-insulating GaAs substrates by the Molecular Beam Epitaxy (MBE) system. In order to obtain a nonlinear potential distribution at the p-n junction, the grown devices are fabricated in Top Hat HELLISH (THH) geometry. Temperature-dependent photoluminescence, wavelength-dependent electroluminescence under different voltage values, and current-voltage measurements are performed to obtain the radiation device parameters of THH devices. By applying a pulsed voltage to the contacts of the THH devices, emission was obtained from the device according to the operating principle of XOR, NOT, OR, and NAND logic gates. It is investigated to obtain optical logic gates with input and output light. In the presence ("1") and absence ("0") of the light coming from the fiber optic cable, emission from the THH device is obtained according to the XOR, NOT OR, and NAND logic gate operating principle. It is shown that these THH structures can be used as an optical logic gate whose input light and output light.