Physical characterization of nano structure metal oxide films deposited by sol gel spin coating method

In this thesis, metal oxide (ZnO, CdO, TiO2 and SnO2) films were deposited by sol gel spin coating method on different substrates (glass, ITO and p-Si). X-ray diffraction (XRD) patterns, field emission scanning electron microscope (FESEM) analysis and optical measurements were used to investigate the effect of deposition and sol parameters such as spin speed, sol molarity, pH value, deposition temperature and annealing temperature on crystallinity, surface morphology and band gap value of the films. Structural parameters such as grain size, lattice parameters and texture coefficients were calculated. Surface morphology was investigated by a FESEM. After the best-formed film parameter was determined, the pn heterojunction diodes were fabricated n-XO/p-Si (X:Zn+1, Cd+1, Ti+2, Sn+2) using this films. The electrical characterization of heterojunction diodes have been investigated by current-voltage characterization. Firstly, n-ZnO/p-Si heterojunction diode was fabricated. From the I-V results the ideality factor (n), barrier height (ϕ_b), saturation current (I_0) and series resistance (Rs) of diodes have been calculated.