Investigation of dielectric properties of Thallium gallium disulfide (TlGaS2) thin films

Thin films are widely used in the manufacture of semiconductor devices, electronic circuit devices, optical systems and recording devices. Therefore, thin film form samples were obtained by using thermal evaporation of additive compunds in form TlGaS2, (TlSbS2)0.5(TlGaS2)0.5 ve (TlSbS2)0.97(TlGaS2)0.03 the capacity and loss factor of these samples were measured at room temperature depending on frequency, thickness and additive ratio. Dielectric loss, dielectric constant and variable electric field conductivity were calculated using the mesaured samples. Finally, the dielectric data obtained from the measured and calculated samples were analyzed according to thickness, frequency and contribution ratio.