Observation of passivation effect on single pixel near and midwavelength infrared detectors

Nowadays, semiconductors are widely used in various areas such as military, health and astronomy. For instance, detectors, transistors, lasers and solar cells are the most common materials used in those areas. Performance of fabricated devices are directly related with the performed methods and processes during device fabrication that can create dangling atomic bonds and consequently generate surface leakage currents. Eventually, those surface leakage currents reduce the pixel's performance. To overcome those surface leakage currents, devices should be passivated with high dielectric constant materials. In this study, the effect of various dielectric materials on the performance of group III-V near and midwavelength infrared single pixel detectors grown by molecular beam epitaxy was investigated.