8-ile-24 GHz düşük gürültülü SiGe BiCMOS V/A modülü çekirdek çipi için iki yönlü ortak-hat

This thesis is based on the design of an 8-to-24 GHz low noise SiGe BiCMOS Transmitter/Receiver (T/R) Module core-chip in a small area by bidirectional common-path. The next-generation phased array systems require multi-functionality and multi-band operation to form multi-purpose integrated circuits. Wide bandwidth becomes a requirement for the system in various applications, such as electronic warfare, due to leading cheaper and lighter system solutions. Although III-V technologies can satisfy the high-frequency specifications, they are expensive and have a large area. The silicon-based technologies promise high integration capability with low cost, but they sacrifice from the performance to result in desired bandwidth. The presented dissertation targets system and circuit level solutions on the described content. The wideband core-chip utilized a bidirectional common path to surpass the bandwidth limitations. The bidirectionality enhances the bandwidth, noise, gain and area of the transceiver by the removal of the repetitive blocks in the unidirectional common chain. This approach allows succeeding desired bandwidth and compactness without sacrificing from the other high-frequency parameters. The realized core-chip has 31.5 and 32 dB midband gain for the receiver and transmitter respectively, with a + 2.1 dB /GHz of positive slope. Its RMS phase and amplitude errors are lower than 5.60 and 0.8 dB, respectively for 4-bit of resolution. The receiver noise figure is lower than 5 dB for the defined bandwidth while dissipating 112 mW of power in a 5.5 mm2 area. The presented results verify the advantage of the favored architecture and might replace the III-V based counterparts.