AlxGa1-xN tabanlı güneş körü Schottky fotodiyotlar

AbstractAlx Ga1−x N BASED SOLAR BLIND SCHOTTKYPHOTODIODESTurgut TutM. S. in PhysicsüSupervisor: Prof. Ekmel OzbayJanuary 2004Photodetectors are essential components of optoelectronic integrated circuitsand fiber optic communication systems. Alx Ga1−x N is a promising materialfor optoelectronics and electronics. Applications include blue and green LEDs,blue laser diodes, high power-high frequency electronics, and UV photodetectors.Photodetectors that operate only in the λ < 280 nm spectrum are called solar-blind detectors due to their blindness to solar radiation within the atmosphere. Inthis thesis, we present our efforts for the design, fabrication and characterizationof Al0.38 Ga62 N/GaN based solar blind Schottky photodiodes. We obtained verylow dark current, high quantum efficiency, high detectivity performance. Under25 V reverse bias, we measured a maximum quantum efficiency of 71 percent at254 nm and a maximum responsivity of 0.15 A/W at 253 nm for a 150 microndiameter device. To our knowledge, these are the best values reported in theliterature. For a 30 micron device, 50 ps FWHM pulse response is observed.When the scope response is deconvoluted, a maximum 3-dB bandwidth of 4.0GHz is obtained for 30 micron diameter Schottky photodiodes.iKeywords: Photodetector, Photodiode, Schottky Photodiode, Low DarkCurrent, Quantum Efficiency, High-Speedii