The investigation of the electrical parametersunder the different illuminations intensity ofAu / 9 - [(5-nitropiridin-2-aminoetil) iminometil] -antrasen (NAMA)/n-Si/In schottky diode

In our study; 9 - [(5-nitropyridin-2-aminoethyl) iminomethyl] -antracene (NAMA) organic compound was coated on the n-type Si substrate by the spin coating method. A Schottky diode sample, Au / NAMA / n-Si / In, was produced and I-V measurements were taken at room temperature under dark and different illumination intensities for the purpose of electrical characterization of this diode. The ideality factor values for dark and 100 mW / cm2 were calculated as 3.54 and 1.39, respectively. Barrier height values were calculated as 0,756 eV and 0,903 eV respectively for dark and 100 mW / cm2. It was observed that the value of ideality factor decreased, and the barrier height of obstacle increased with the increase of illumination intensity. Series resistance (Rs) values were determined by applying Cheung & Cheung method. Series resistance values were found to be 10944 and 8281, respectively, for dark and 100 mW / cm2.