Production of zinc-oxide based dielectric materials and research of their dielectric properties

In this study, both capacitance-voltage (C-V) and conductance-voltage (G-V) measurements of the metal (Au)/semiconductor (p-Si) (MS) structure with (0.5% Bi-doped ZnO) interlayer grown by hydrothermal method were measured at low (10 kHz) and high (1MHz) frequencies with 50 mV steps between ±4V voltage range. The fundamental electrical parameters of the structure, namely diffusion potential (VD), Fermi-energy level (EF), potential barrier height (ΦB) and depletion layer width (WD) were also obtained from the intercept point (Vo) and slope (dC-2/dV) plot. The voltage-dependent distribution profile of the interfacial states (Nss) was obtained from the high-low frequency capacitance (CHF-CLF) method, and the voltage-dependent resistance (Ri) profile of the structure was also from C and G values by using the Nicollian-Brews method, respectively. Using experimental C-V and G-V data, the voltage-dependent dispersion profiles of the complex dielectric constant and electric modulus were obtained. Consequently, tangent-loss (tan) value was obtained depending on voltage. To see the polarization effect, ''-' (Nyquist) plots were also obtained. It was observed that all these experimental results strongly depend on both frequency and voltage. The prepared MPS structure can store charge or energy locally and therefore can be easily used instead of conventional metal-oxide-semiconductor (MOS) structures.