Multi-layer and spring-assisted triboelectric nanogenerator design

In this age where technology is developing very fast, electronic devices have spread to every field. The use of these devices has brought the need for energy everywhere at any time. For this reason, new technologies that can produce energy at any time are sought. As a result of these searches, Triboelectric Nanogenerator (TENG) energy conversion technology was discovered. Different types of mechanical energy are wasted in almost every part of the world. TENG is a technology that collects various and small amounts of wasted mechanical energy and converts it into electrical energy. TENG aims to produce electrical energy as a result of the contact of two different materials. Since each material has different electron affinity, it is possible to obtain electrical energy as long as two different materials are used. It has many advantages such as light weight, low cost, simple mechanism, small dimensions, high power output. Thanks to these features, TENGs are very important energy conversion devices for feeding portable electronic devices. In this study, Al or Ti conductive particles were added to silicon to improve the output performance of TENGs and the optimum additive ratio for maximum power output was determined. Glass fiber was used as tribo-positive material and silicon was used as tribo-negative material in TENG production. First, 2.5% by weight Al or Ti conductive particles were added to the silicon and thickness optimization was made for the doped silicones according to the obtained power values. For TENGs produced from Al or Ti doped silicon, the highest power density was obtained at 0.85 mm thickness. After the thickness optimization, Al or Ti conductive particles were added in different weight ratios, and the effect of the additive ratio on the output performance of TENG was observed. While the best electrical results were obtained at the rate of 2.5% by weight for Al doped TENGs, the best electrical results were obtained at 5% by weight for Ti doped TENGs. Finally, it is aimed to increase the output power of TENG by making multiple measurements of Al or Ti doped silicons with the best electrical results. Multi-layer TENG measurements showed that the current increased proportionally with the number of layers and the output voltage remained constant due to the nature of the parallel connection.