The effect of external magnetic field and laser field on electronic specifications in multiple quantum wire structure

The binding energy of an electron in the structure under the influence of magnetic and laser field applied externally to the multiple square well wire system was calculated. The sensitivity of the binding energy to externally applied effects was demonstrated by considering different wire sizes. Quantum wire well was considered, using the GaAs/AlxGa1-xAs semiconductors as a multiple quantum wire structure. The applied magnetic field was chosen to be in the negative z direction parallel to the wire axis and likewise, the laser field to be in the negative z direction parallel to the wire axis. In calculations, finite difference numerical differential equation solving method was used. How electron band energies depend on applied areas and wire thickness was shown. In order to understand the electronic properties of such structures, it has been shown that more economical and faster results will be obtained than experimental studies