The effect of electric field and lazer fi̇eld on electronic specifications in multiple quantum wire structure

Hydrogenic foreign atom binding energy was calculatedun dertheeffect of electric and laser field applied externally to the triple square well wire system. The sensitivity of binding energy to externally applied effects was demonstrated by considering different wire sizes. The maltiple quantum well structure was created from GaAsand AlxGa1-xAs semiconductor material. The applied electric field was selected to be perpendicular to the wire positive x-direction and the laser field to be paralel to the wire negative z- direction. In calculations, finite difference numerical method was used. As a result of the calculations, it was shown how the electron band energies depend on the applied fields and wire sizes. Theoretical understanding of the electronic properties of such structures is an economical method for developing new technological devices.