Cox-strack ve 4 noktalı prob tekniklerine dayalı geliştirilmiş temas direnci ölçme yöntemleri

Contact resistivity (rc) of metal-semiconductor or conductive layer-semiconductor in the solar cells can limit their performance if not treated with care. It is, therefore, of great importance to be able to accurately measure rc for its optimization purposes. Many methodologies have been developed for this purpose. In this thesis, various methods for extracting rc are investigated. Namely, Transfer Length, Cox and Strack, four-point probe methods are discussed in detail. Cox and Strack and four-point probe methods are further extended with analytical formulations to simplify the fabrication of test samples and increase the speed of extracting rc. Good agreement (relative error < 10 % for extended Cox and Strack; < 1.9 % for extended four-point probe) between the derived analytical formulations for the proposed methods and finite element method simulations is achieved. Furthermore, c of experimentally fabricated test samples determined using classic and improved methodologies is reported with good agreement between the two. Finally, a simulation study is performed to determine the optimum dimensions of the front metal grid design to be utilized in the fabrication of the solar cells.