Comparison of binding energies in quantum wells made of four different materials

In this master's thesis, materials formed by the assembly of low-dimensional structures have been studied. These materials hold a significant place in the research of nanomaterials and nanostructures, which are subfields of nanotechnology. Nanomaterials can exhibit different behaviors from their normal forms due to their nanometer-scale dimensions. In this context, quantum wells play an important role. Quantum wells are structures composed of semiconductor materials where electrons are confined by quantum mechanical restrictions at certain energy levels. In addition to natural elements such as Selenium (Se), Silicon (Si), and Germanium (Ge), compounds like copper oxide (Cu₂O), gallium arsenide (GaAs), indium phosphide (InP), and lead sulfide (PbS₂) are also used to form quantum wells. These semiconductor materials are utilized in modern technological applications, including electronic devices, optoelectronic components, solar cells, lasers, and many others. Particularly with the advancement of nanotechnology, the usage areas and performance of these materials are continuously improving. This thesis aims to contribute to the understanding and application of these developments. In this thesis, quantum wells are defined using semiconductor materials 〖In〗_(1-x) 〖Al〗_x P/InP, Ga_(1-x) 〖Al〗_x As/GaAs, 〖In〗_(1-x) 〖Ga〗_x As/InAs, and 〖In〗_(1-x) 〖Al〗_x As/ InAs for different x concentration values. The behavior of these semiconductor materials in quantum wells and the changes in their energy levels have been investigated. The changes in the binding energy of electrons in these selected semiconductor materials under the influence of an electric field and in the presence of an impurity atom in the quantum well have been examined through graphs. The quantum wells formed with the materials used in this study have been considered as finite symmetric quantum wells. The concentration amount expressed by "x" has been taken as x = 0.35 for all the selected materials. To exemplify the expression of "x", in the Ga_(1-x) 〖Al〗_x As/GaAs semiconductor material, aluminum is used as the concentration. If x=0.35 is written for the Ga_(1-x) 〖Al〗_x As/GaAs material, it becomes Ga_0,65 〖Al〗_0,35 As/GaAs, indicating that this quantum well consists of 35% Al and 65% Ga.