Investigation of the effects of low energy protons on photovoltaic cells

In this thesis, the electrical parameters of the photovoltaic cell exposed to the proton beam were investigated. The effect of proton radiation on the electrical characteristics of the silicon cell was investigated. It is aimed to examine the changes in the efficiency of the silicon cell exposed to radiation. Maximum power, short-circuit current, open-circuit voltage and power conversion efficiency were calculated from the current-voltage (I-V) and power-voltage (P-V) characteristics of the non-irradiated silicon cell. Then, the same parameters were calculated for 395 Gy irradiation and comparisons were made for the conditions before and after irradiation. SRIM/TRIM simulation was performed to analyze the effects of radiation-induced displacement damage on cell performance.