Fabrication and optical properties of fe-doped tio2 thin films

We have carried out the structural, electronic and optical properties of Iron (Fe)- doped TiO2 thin films by sol-gel technique. The results revealed that the thin films form in a granular structure where particle-like grains covers the surface. Photophysical features of the thin films were performed by UV-vis spectrometry. The optical band gap of undoped TiO2 thin film decreases from 3.17eV to 3.05eV with an increase in atomic ratios of Fe content, so the electron transfer is easier from the valence band to the conduction band. The current-voltage (I-V) and capacitance- voltage (C-V) characteristics of the undoped and Fe-doped TiO2 thin films were investigated under dark and various lighting intensities. Our results show that the photocurrentsincreased with increasing intensities of illumination. The photodiodes also show a decreasing capacitance with increasing frequency. From I-V and C-V plots, the photodiodes show rectifying properties and good photovoltaic behavior. Herein the results revealed that the produced new Fe-doped TiO2 thin film samples can be used for photodetector applications.