Galyum nıtrat kimyasal mekanik planarizasyon geliştirme aracı takımı, proses ve post cmp temizleme optimizasyonu

In this thesis, a new Chemical Mechanical Planarization (CMP) process and a complementary tool set-up are introduced to enhance Gallium Nitride (GaN) material removal rates while controlling the post planarization surface quality. The key process variables are studied to set them at an optimal level, while a new slurry feeding methodology is introduced in addition to a new tool set up to enable high material removal rates and acceptable surface quality through close control of the process chemistry. Post-CMP cleaning procedures are also studied with glass slides (as a model) to determine the particle and contaminant detachment efficiency by using regular and viscoelastic fluids. A new particle removal procedure is introduced for post CMP cleaning, which can help preserve the surface quality of the wafer. CMP of GaN is a new study area, which is getting attention due to the recently developed wide range of applications of GaN as a material in high power, high frequency and high temperature microelectronic device manufacturing. However, its challenging mechanical properties such as hardness and being prone to fracturing in addition to the chemical correspondence to slurry additives based on crystallographic orientation result in complicated processes and ineffective use of consumables in order to planarize the surface of GaN. Therefore, this study focuses on the optimization of the planarization process of GaN bulk wafers to reduce the CMP processing time through increasing material removal rates and maintaining surface quality so that the process becomes more efficient and sustainable.