Electrochemical deposition and characterization of InSe

In this work, InSe thin films was grown on ITO by electrochemical deposition technique using indium (III) sulphate hydrate (In2(SO4)3xH2O) and selenium dioxide (SeO2) in DI water. In order to obtain optimum film characteristics, growth parameters was changed such as between 2-3, potential between -0,600 and -0,730 V, temperature 30 °C and 90 °C. The best quality InSe thin films have been obtained from 2.10-3 M indium (III) sulphate hydrate (In2(SO4)3xH2O) and 1.10-3 M selenium dioxide (SeO2) within DI water of 85 °C for one hour, at the pH= 2 and V= -0,730 V. It was observed from the XRD measurements that the InSe thin films grown by ECD were in polycrystal form having the (110) preferred orientation. The band gap values of the optimum InSe thin films were measured as 2,12 eV from the absorption measurements. The atomic force microscopy (AFM) measurements showed that the average roughness value of the surfaces of InSe films obtained by electrochemical deposition technique was around of 172,08 nm.