Investigation of electron spin resonance (ESR) spectra of Mn(manganese) doped semiconductors

Semiconductors are the elements and compounds whose resistivities between conductors and insulators vary between 10-3-10-5m. When the resistivity values of the semiconductors at very low temperatures and very pure values were examined, it was observed that these values were comparable to the resistivity values of the insulating materials. Unlike metals, semiconductors are better conductors in a hot environment than they are in the cold. Consequently, the conductivity of the semiconductors is directly proportional to temperature. In solid state physics, the physical properties of semiconductors are of great importance. It is important for semiconductors to have maximum efficiency in semiconductors especially in industrial field. In this respect, in order to increase the efficiency of the semiconductors, it is necessary to add some proportions. For examining the effects of the manganese additive of a semiconductor on the chemical structure and physical structure of the semiconductor, we can take more than one semiconductor compound and examine the changes that the manganese additive produced in these compounds. ESR was first proposed by Zavoisky in 1945. Basically, it is the absorption resonance of the electromagnetic radiation with the magnetic moment of the sample with the electron that is not paired in the static magnetic field. In this study, the effects of manganese (Mn) doped semiconductors with electron spin resonance method will be examined. The results will be determinant in obtaining efficient semiconductor.