Otomotiv uygulamaları için 77 GHz SiGe BiCMOS FMCW RADAR

SiGe BiCMOS technologies have been improved such that they offer comparable, sometimes even better RF performances with respect to their counterparts, especially III-V technologies. Further, SiGe BiCMOS technologies can integrate CMOS transistors and SiGe HBTs on the same chip. These advancements make possible to implement IC designs with low-cost and high integration. Also, due to the increasing demand for compact system designs with low-cost, and low-power-consumption, millimeter-wave systems became attractive for both industry and academia. These developments have paved the way for millimeter-wave systems. Therefore, in this thesis work, a 77 GHz SiGe BiCMOS FMCW Monostatic RADAR for automotive applications is presented. The system was designed and implemented with IHP's 0.13 µm SiGe BiCMOS SG13G2 technology which offers HBTs with ft/fmax of 300 GHz/500 GHz. The schematic designs and implementation of each sub-block and the overall system were shown. Then, the simulation results for all the sub-blocks and the system were presented. The total chip area for the system is 5.05 mm2. The total power consumption of the system is 0.32 mW. The system achieves 8.5 dBm output power with only one TX channel. The simulated NF of the RX-channel is 9.1 dB and RX-gain is 18 dB. The simulation results show that the designed system can detect targets up to 180m distance with a maximum velocity of 170km/h with accuracy. Also, the designed system can separately identify two targets with a range resolution of 15 cm. This work is the first demonstration of a 77 GHz long-range-RADAR designed with an EBD.