Calculation of the electrical parameters of schottky junctions prepared by P-Si semi-conductor

In this thesis, a p-type boron doped and (100) oriented silicon crystal with diameter of 5 cm, resistivity of 5 ohm-cm and thickness of 250 micrometer has been used. After chemical cleaning process, 40 diodes have been formed on the same crystal with a diameter of 1.7 mm. The basic electrical parameters of diodes that formed from Al/p-Si have been determined. For this, the current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements have been made at room temperature and dark environment. From these measurements the ideality factor, saturation current, barrier height, surface states, diffusion potential, serial resistor, Fermi energy level, depletion layer width, Schottky lowering and maximum electric field have been determined for 40 diodes. The values that obtained using serial resistor calculation techniques have been coherent with each other. Despite the use same conditions and crystal surface to formation of diodes the obtained parameter values have been different for each diode. For this reason all parameters have been fitted to Gaussian function. With the aid of this function the mean values and standard deviation of calculated diode parameters have been obtained with statistical dispersion for 40 diodes. Experimental results show that, the nature oxide layer that formed on the metal/semiconductor interface, surface states, barrier height inhomogeneities and serial resistor play important role on the electrical characteristics of structure.