Responses of Pt/n-InP schottky diode to electron irradiation in different temperature conditions

Electron irradiation induced electronic properties of Pt/n-InP Schottky diode depending ondifferent temperature conditions were investigated in this study. Firstly n-type InP wafer wasexposed to the chemical cleaning process as described in detail in the thesis. Then pre-preparedZn-Au alloy was evaporated on the back side of the semiconductor by thermal evaporationmethod. After this stage, the sample was annealed 300 0C for 3 minutes under nitrogenatmosphere in a quartz tube furnace to obtain low-resistant ohmic contact. Platinum metalcontacts were formed as circular forms on the front face of the annealed sample by usingmagnetron sputtering technique. Then sample was exposed to 12 MeV electron irradiation byusing a linear electron accelerator (LINAC). I?V measurements were obtained under 20, 160,260, 300, 320 and 400 K temperature conditions before and after irradiation. Basic Schottkydiode parameters were determined by both I-V-T and Norde method. Forward currents for 160,300 and 400 K were not changed very much by irradiation but remarkable change in thecharacteristics were seen only at 20 K slightly. Reverse currents of Pt/n-InP Schottky diodewere increased distinctly at 20, 160, 260, 300, 320 and 400 K by irradiation.