Characterization of Ti-doped ZnO nanomaterial produced by RF sputtering method

In this thesis work, Ti doped ZnO (TZO) was prepared with RF magnetron sputtering. TZO nano materials were deposited on both corning glass (CG) and n-type Si substrates. The structural, morphological, optical and electrical properties of the TZO nano material were investigated. It was determined that TZO nano material deposited on CG has good crystallinity, good surface homogeneity, low surface roughness and a suitable band gap value from X-Ray diffraction (XRD), atomic force microscopy (AFM), as well as UV-Vis analysis. TZO nano material deposited on n-Si substrates was used for electrical characterization. The current–voltage (𝐼 − 𝑉) characterization of the Au/TZO/n–Si structure was done at 80 K and 300 K. Here, Thermionic Emission Theory and Cheung-Cheung method was used to determine the series resistance (𝑅𝑠). The obtained results show that they are compatible with each other. In addition, the characterization of capacitance-voltage ( 𝐶 − 𝑉 ) and conductance-voltage (𝐺/𝜔 − 𝑉) of the Au/TZO/n-Si structure was done for the frequency values of 0.3, 0.5 and 1.0 MHz. The 𝑅𝑠 value was determined from the 𝐶 − 𝑉 and 𝐺/𝜔 − 𝑉 curves. It was seen that 𝑅𝑠 decreases with increasing frequency. Also the values of diffusion potential at zero bias 𝑉𝐷, Fermi energy 𝐸𝐹 , space charge layer width 𝑊𝐷 and Schottky barrier height from C - V measurement 𝜙𝐶𝑉, were determined from the 𝐶−^2 − 𝑉 curve. Contrary to the 𝑅𝑠, these values were found to increase with increasing frequency. According to the results of the structural, morphological, optical and electrical characterization of the nano material that has been produced in this work, it was determined that this structure is suitable for optoelectronic applications.