Growth of InXGa1-XN ternary compound as thin film by RF magnetron sputtering technique and investigation of characteristic properties with experimental analysis

In this thesis study, indium gallium nitride triple compound was grown under different deposition parameters by using radio frequency magnetron sputtering technique. The structural, optical and morphological characteristics of the InGaN compound have been studied in detail. XRD, XPS, Raman for structural analysis; absorption measurement technique for optical properties; SEM and AFM measurement techniques were used for their morphological characteristics. In order to obtain optimum conditions for the growth of the scattering technique, many parameters such as substrate, substrate temperature, RF power variation, working pressure and nitrogen gas flow rate are taken into consideration. In the XRD analysis of the deposited films, many films exhibited hexagonal crystal structure. The orientation and intensity of the XRD peaks of films grown under different operating parameters have changed. Under some parameters, it is observed that the film structure is dendritic. Four types of elements, including Ga, N, In and O, are observed both in the suRFace and in the InGaN film in the XPS results. The chemical states of the grown InGaN films were also investigated by XPS. O (1s), In (3d5/2), Ga (2p3/2) and N (1s) photoelectron peaks were selected for this analysis. As indicated by the relatively high density O-associated XPS O (1s) feature, the suRFace of grown InGaN films is significantly oxidized. In the Raman analysis, the optical phonon modes of the InGaN compound are A1(LO) and E2(high). As a result of the Raman analysis, the peak of the E2(high) mode (430 cm-1 – 490 cm-1) is very weak because the peak of the Si substrate is very strong at 520 cm-1 from the peak of the raman changes of the InGaN film. On the other hand, the peak of the A1(LO) mode is very broad (616 cm-1 - 720 cm-1). The characteristic Raman change peaks belonging to the films are in the strenching mode. In the SEM analysis, the crystal structure and grain boundaries of the structure are clearly visible and both crystal formation and dendritic structure formation are supported. In the results of the AFM, there are locally peaks and valleys, and partially homogeneous and circular-like clusters are arranged. In addition, all deposited films under different parameters have linear roughness between 0.48 nm and 85.48 nm. When the optical properties are taken into consideration under various growth parameters, it is determined that the band gap values obtained in the absorption measurements are the lowest 2.34 eV and the highest 3.26 eV. The resulting wide band gap makes InGaN films a versatile potential PV material that makes possible the configuration of many known PV devices and tandem structures. Due to their morphological properties, we can say that they are suitable structures for optoelectronic applications and friction applications in engineering. We can also say that films with hexagonal crystal structure can be used in device applications such as LED, laser diode and power electronics.