Serigrafi ile bor katkılanmış arka kontak arka eklemli (IBC) güneş hücresi üretimi

Interdigitated back-contact (IBC) solar cells with their unique structure, having both n and p doped regions as well all as contacts at the rear side, have the potential to achieve high-efficiency values. The record efficiency value at industrial scale have reached 25.2% for mono-crystalline silicon. This thesis focuses on the development of IBC cell structure which is one of the best performing cell structures. The scope of this thesis requires the full understanding of controlling the boron doping on an n-type wafer for decent process optimisation using Boron doping paste. The thesis also aims for the study of the necessary characterisation techniques, i.e. sheet resistance measurements, and electrochemical capacitance-voltage (ECV) profiling. Corresponding cell fabrication is based on screen-printing of Boron doping paste, annealing, and following metallisation steps. The bifacial structure is also demonstrated as a secondary proof-of-concept. The produced cells have been characterised and analysed with 8.70% efficiency on IBC and 7.43% efficiency on bifacial structures.