Thermoelectric properties of silicon doped germanium

Seebeck coeffcient is a property of material which shows the electrical potential difference created by the temperature difference. This electrical potential is useful in thermocouples and thermopower generation applications. Silicon doped germanium is a good material for thermopower generation applications. Moreover, in interface temperature measurement of bulk growth is possible with the thermoelectric property of Ge-Si alloy. Seebeck coeffcient measurements are made by the small ?T technique. In this technique, potential difference between two probes are measured and with changing the temperature of one probe potential difference change with respect to temperature can be calculated. Seebeck coeffcients of evaporation grade germanium, 5 atm% and 50 atm% silicon doped germanium has been measured. Moreover, electrical resistivity of 5-25 atm% silicon doped germanium at room temperature has been measured. Also, high temperature electrical resistivity measurements for 5 atm% and 50 atm% has been attempted.