Investigation of DC conductivity mechanisms of TlInSe2 compound

In this thesis, semiconductor material TlInSe2 was used related with TlIII BIII C2VI (B=As, Sb, Bi, In, C=S, Se, Te) ternary type semiconductor group which were grown by the using Bridgman-Stockbarger technique. The current and voltage characteristics for these samples were analyzed with a voltage range of 1-13 Volts and a temperature range between 293 K- 373 K. The conduction activation energy has a single value indicating the existence of one type of conduction mechanism in the investigated temperature range. The electrical conductivity of the sample was found to be controlled by a thermally activated mechanism. In our research, we determined the existing and dominant DC conductivity mechanisms and whether it shows electrical anisotropy. The DC studies revealed the non-ohmic type of conduction. It was found that the dominant conduction mechanism in these samples is space charge limited current type. Activation energies were also calculated at different voltages and it was observed that the activation energy decreased with the incresase of the applied voltage.