Parameter analysis for RF energy harvesting at Wi-Fi frequency

In this study, circuit of 2.45 GHz and 5,8 GHz RF energy harvesting from 1st stage to 6th stage which is considered that use of lumped components that produced by manufacturing companies, has been studied. All analyzes have been made through simulation using the Advanced Design System (ADS) 2016 program. The system was designed to operate at a frequency of 2.450 GHz and 5,8 GHz (Wi-Fi) with a 50 Ω internal resistance antenna. For the rectification circuit, the use of HSMS2850, HSMS2852, HSMS285B, HSMS285C, HSMS2860, HSMS2862, HSMS286B, HSMS2820, HSMS2822, HSMS2810, and SMS7630 Schottky diodes have been considered. The load resistance at which the system efficiency is highest at this frequency and the input power ranging from -30 dBm to 0 dBm were determined, for each diode. An L-type (L-C) impedance matching circuit design was developed to enhance the efficiency, and Murata products parameters that closely match the obtained values were used. Finally, the output voltage and efficiency of the resulting system were analyzed by using an open-serial transmission line (TL) in order to bring the efficiency, which is away from ideal values by using the manufacturer's products, closer to the ideal. Among the examined diodes, the highest efficiency was obtained for SMS7630 diode as 46% at a load resistance of 2.7 kΩ and -1 dBm input power. The highest output voltage was obtained for HSMS286B diode as 3 V at 3rd stage, a load resistance of 36.6 kΩ and 0 dBm input power with 2,45 GHz frequency. The highest efficiency was obtained for SMS7630 diode as 35% at a load resistance of 2 kΩ and 0 dBm input power. The highest output voltage was obtained for SMS7630 diode as 1,67 V at 6th stage, a load resistance of 15,3 kΩ and 0 dBm input power with 5,8 GHz frequency.