500MHz-2GHz broadband power amplifier design by non-linear modeling methods

This thesis presents the design methods of 500MHz-2GHz broadband RF poweramplifier. First of all, RF power transistor technologies are searched and the mostsuitable one is chosen according to its operation of frequency band, maximumoutput power, efficiency and cost features. The amplifier is designed as it has twostages, and in both stages LDMOS transistor technology is used as RF powertransistors. Large signal models for the LDMOS devices are used in simulation, andaccording to the measurement results, the circuitry in simulation is tried to model atnonlinear conditions. A broadband RF-Choke structure with a new technique isdeveloped to obtain high DC isolation and low RF loss over the desired bandwidth.Input and output matching networks and shunt feedback topology are introduced tofulfill the bandwidth requirements. Typical values of 20dB power gain, 37dBmoutput power, have been achieved at the most part of the frequency band of500MHz-2GHz.