Electron and magneto transport properties of AlGaN/GaN based high electron mobility transistors (HEMT)

In this study, electron and magnetotransport properties of 6 different AlGaN/GaN and AlGaN/AlN/GaN/AlN structures were investigated. Resistivities were measured at a temperature range of 22 ? 350 K, Hall mobilities and Hall carrier densities were measured at the same temperature range and magnetic fields between 0 ? 1.5 T. Two-dimensional and 3-dimensional conduction mechanisms were seperated using Quantitative Mobility Spectrum Analysis (QMSA) of magnetotransport measurement results. Results of Hall measurements and QMSA results were used to conduct scattering analysis and strain calculations separately and the differences were examined. Well width of the quantum well that the 2-dimensional conduction occured, roughness of the related interface where the conduction occured and the strain of the interface were calculated. Succesfull calculation of these parameters related with the sctructural properties will lead to produce samples which will have better electrical properties.