Investigation of current-voltage (I-V) measurements of the Au/PVA/n-Si MIS structure on temperature

In this study, the Au/ PVA/ n-Si metal-insulator semiconductor MIS Schottky diode was produced and the I-V measurements of this diode were taken at the temperature range of 80-400K for different temperatures. Using these measures, the ideality factor (n), zero-bias barrier height ( ? B0), interface state density (Nss), interface state energy (Ess) and saturation current (I0) of the diode were calculated. The I-V measurement was done with 20 mV steps between -5V and +5V. By the Cheung function, series resistance (Rs) was calculated. It was found that, particularly, the ideality factor (n) and series resistance (Rs) of the diode depend on the temperature, and it decreases with increasing temperature. It was determined that the barrier height increases when the temperature increases.Key Words :Schottky diode, ideality factor, interface state density, series resistance