Boron doped reduced graphene oxide synthesis and characterization

According to the literature, materials commonly used in graphene doping are The elements are nitrogen (N), boron (B), phosphorus (F), and sulfur (S). The point to consider when choosing additives is the relationship between the atom contained in the additive and the carbon atom and the application area in which it will be used. Therefore, boron and nitrogen are widely used in p and n type doping. Boron and nitrogen; Boron and nitrogen are widely used because they can be more easily integrated into the graphene oxide lattice structure due to the size of the carbon atoms. Accordingly, doping boron and nitrogen molecules into graphene is an effective approach to tailor the electronic properties and chemical reactivity of graphene. Improving the capacitance of graphene oxide or reduced graphene oxide can be improved by doping with hetero atoms such as boron or nitrogen. It has been observed that the surface area increases with the increase in the number of pores in graphene during doping. The reason why boron doping is used more widely than nitrogen is that nitrogen can be oxidized very easily, and the decrease in the nitrogen rate in the synthesized material day by day due to oxidation has led researchers to use boron-doped reduced graphene oxide. Another remarkable feature of nitrogen doping with boron is that boron-doped reduced graphene oxide can withstand up to high temperatures. Thanks to this feature, various applications are available. Graphene attracts the attention of many researchers because it is a very new material, has wide application areas and has superior properties. Although graphene oxide exhibits properties similar to graphene and has a wide range of uses, especially in industrial applications, it is an electrical insulator. Although the electrical properties of graphene oxide are improved by the reduction step, the reductants used are expensive and do not allow the formation of sufficiently active groups after long processes such as optimization of many parameters such as temperature, time, reductant chemical ratio for reduction of oxide groups. In this context, with the synthesis of boron-doped reduced graphene oxide, better material synthesis will be achieved in terms of electrical properties compared to reduced graphene oxide. In addition, the synthesis of boron-doped reduced graphene oxide using chemical methods will be an important advantage, as it allows relatively cheap and large-scale graphene synthesis. Characterization methods will be applied to demonstrate that the doping process has been successfully achieved. As a result of the applied characterization processes, the degree of success of reduced graphene oxide doping will be determined and thus the electrical properties of reduced graphene oxide will be improved in a cheap and easy way. The fact that there are limited thesis studies on graphene oxide nationally will enable it to contribute to studies in this field. Following the graphene oxide synthesis and doping processes to be carried out within the scope of this thesis, application opportunities will be provided for reduced graphene oxide in many areas, including solar cells.