Development of c-Si SHJ/perovskite tandem solar cells and characterization

Recent advancements in c-Si SHJ and perovskite tandem solar cells have accelerated with efforts focused on optimizing both the top and bottom cell layers, integrating innovative materials, and diversifying the types of silicon cells used as substrates. In this study, the development and characterization of the top and bottom cells in c-Si SHJ/perovskite tandem solar cells were conducted. The bottom cell was characterized by optimizing the O2 ratio and the temperature of the ITO layer, which plays a crucial role in the c-Si heterojunction solar cell. In the top perovskite cell, all layers were fabricated and characterized using a solution-based spin coating method. In the first step of forming the monolithic c-Si Heterojunction/Perovskite Tandem cell structure, ITO films were deposited via magnetron sputtering at temperatures ranging from room temperature (25 °C) to 250 °C, with the optimal temperature for the ideal ITO film being determined as 200°C. In the second step, the tandem cell structure was completed by fabricating the perovskite top cell layers onto the bottom cell produced at this optimal temperature. The efficiency of the Tandem-200 configuration, encompassing both the bottom and top cells, was measured to be 16.74%.