Electromagnetic analysis and design of dividers and couplers at X-band

Power divider and combiner structures are the necessary and crucial passive components in order to reach high power levels for the microwave applications. The improvements in the RF/Microwave systems in the past decades have led to increasing demand for the compact, high performance power divider/combiners. In this thesis, four-way offset power divider/combiner, two-way ring power divider/combiner, three-way phase shifted Wilkinson power divider/combiner and four-way corporate power divider are designed at 8-12 GHz frequency band by using miniaturization techniques. Their analytical solutions are presented, and design procedures are explained using Advance Design System (ADS) software environment. These divider and combiner structures are fabricated using Bilkent University Nanotechnology Research Center (NANOTAM)'s Gallium Nitride (GaN) on Silicon Carbide (SiC) process. Details of the fabrication steps are demonstrated. On-wafer measurements of the designed divider and combiner structures are performed in NANOTAM laboratories are presented. Measurement and simulation results for insertion losses, input and output losses and isolations of the output ports are investigated for each power divider/combiner structures. Comparison of the measurement and simulation results are examined in detail.