Development of nano-scale smart thin film and coating material systems for flexible electronic applications

The development of microbolometers for many applications, including industrial production of microbolometers for infrared imaging technology, has the potential to significantly impact daily life products and the scientific revolution. This thesis covers studies to develop new generation thin films that can contribute to the search for alternative materials and analyze their potential application for uncooled IR microbolometers by examining their properties. In this context, firstly, after analyzing the structural properties (β phase), electrical resistance (64 Ω/sqr), and resistivity (148 Ω.cm) of TiAlV thin films optimized through parameter adjustments during production, we concluded that these films, which exhibit the highest growth rate, are suitable candidates for electronic applications. In the second part, the use of TiAlV and TiAlVOx buffer layers in the production of VOx smart metal oxide thin films on both rigid and flexible substrates for uncooled IR microbolometer was investigated. TCR values of 3.17 and 2.67(-%/K) were obtained for the TiAlVOx(10 nm)/VOx(50 nm) thin film system grown on glass and polyimide substrates, respectively, demonstrating the potential of the TiAlVOx(10 nm) thin film as an intermediate buffer layer in the production of VOx smart metal oxides. In the final part, the TCR values of 2(-%/K) obtained for TiAlVOx thin films grown on Si/SiNx substrates at different oxygen flow rates, along with the electrical resistivity value (0.08 Ω.cm), which is much lower than that of known active materials in the literature, led to the conclusion that a new alternative material with potential for use in IR microbolometer applications was obtained.