The effect of different solvent and thickness on the structural, electric and optic properties of er doped ZnO based semiconductor nano thin films produced by sol–gel method

In this study, 𝐸𝑟 doped 𝑍𝑛𝑂 based semiconducting nano thin films are produced by the sol-gel method using dip coating method is the most widely used method for preparing nano size materials. 𝑍𝑛1−𝑥𝐸𝑟𝑥𝑂 thin films are prepared different coating thickness using different solvent. The effect of the Er doping and film thickness on structural, electric and optic properties of the 𝑍𝑛𝑂 semiconducting nano thin films is investigated in detail. For comparison, undoped sample is prepared in the same conditions. 𝑋-ray diffraction analysis (𝑋𝑅𝐷) is used to determine phase analysis and lattice parameters of the semiconducting thin films and scanning electron microscope (𝑆𝐸𝑀) measurements are made for microstructure properties. The resistivity measurement for electrical properties and transmittance measurement for optic properties are carried out.