The investigation of characteristic properties of n-cds/p-cu2s solar cells created by different methods

In the first stage of this study, the structural, electrical and optical properties of the single crystal CdS material used as a base layer in the solar cell were examined. Then, CdS/Cu binary structures were obtained using the cold substrate method (200 K), classical vacuum evaporation method (300 K) and chemical immersion method. FESEM images showed that the CdS surface coated at a 200 K substrate temperature was coated with equal sized Cu nano clusters. Heterojunction formation in CdS/Cu binary structures was performed by heat treatment 180 °C for 10 minutes in the air ambient. For the detected n-CdS/p-Cu2S solar cell samples, the sensitivity spectrum according to the wavelength was measured to determine the working area. The results obtained showed that the n-CdS/p-Cu2S solar cell produced at 200 K substrate temperature produces photovoltaic values in the wider wavelength range. The effective formation of the Cu2S phase at 200 K substrate temperature was thought to be caused by superficial plasmon resonance event occurring in Cu layer by annealing. I-V and C-V measurements of the n-CdS/p-Cu2S solar cell were performed weekly in dark and illumination ambient (93 mW/cm2). Open circuit voltage (VOC), short circuit current (ISC), maximum power (Pmax), filling factor (FF) and efficiency (η) were calculated from I-V measurements. From the C-V measurements, donor density (Nd) and junction barrier potential (Vbi) were calculated.