The effect of annealing process on hot electron in GaInNAs/GaAs structures

In this study, magnetotransport measurements were performed in Ga0.68In0.32N0.017As0.983/GaAs quantum well (QW) structures, which were grown by solid-source Molecular beam epitaxy (MBE) technique equipped with radio frequency plasma source. The effect of annealing time on the electron temperature, power loss and energy relaxation rates in GaInNAs/GaAs samples were investigated by comparing the relative amplitudes of Shubnikov-de Haas oscillations as a function of temperature and electric field. Experiments were carried out by applying an electric field between 0.165-5.276 kV/m at a temperature range between 1.8 and 40 K under magnetic up to 11 T in dark medium. The cooling mechanisms of hot electrons were examined by comparing the theoretical power loss models with the experimental power loss data obtained in the low-temperature regime. It was observed that hot electrons cooled as results of unscreened piezoelectric and deformation potential interactions with crystal lattice. Additionally, the piezoelectric stress constant (e14) chosen as a fit parameter in the theoretical power loss calculations was found.