Growth and characterization of high quality GaSb epilayers on GaSb substrates
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Abstract (EN)
GaSb epilayers on GaSb substrates were grown by molecular beam epitaxy by using different growth and cooling procedure parameters and characterized. The effect of growth and cooling procedure parameters on the crystal quality and surface were analyzed. It was demonstrated that the amount of Sb flux and Sb termination temperature applied during the cooling period has a crucial role on the surface of the epilayers. Besides, it was shown that those surface residues affect the mesa structure which is used in device fabrication and proposed a solution to overcome that issue.
Author
Seval Şahin
How to Cite
Seval Şahin (Master Thesis). Growth and characterization of high quality GaSb epilayers on GaSb substrates, 2014, Anadolu University.
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