Modeling of HEMTs structures with finite element method in terms of channel modulation

Advances in microelectronic technologies based on high electron-moving transistors (HEMT) have led to major advances in microwave and radio frequency (RF) electronics, as well as in high-power density applications and power amplifiers. Thanks to the properties of wide band gap (WBG) semiconductor materials preferred in electronic structures and the advantage of two-dimensional electron gas (2-DEG) channels, HEMT devices have become more efficient compared to other semiconductor devices. WBG materials such as gallium arsenide (GaAs) or indium phosphate (InP) are used to produce HEMT structures for high gain and high frequency applications, whereas HEMT devices based on gallium nitride (GaN), due to their superior properties, are of great value in meeting the needs of high power applications. On the other hand, studies on improving the breakdown voltage (Vbr) and operating characteristics of GaN-based HEMT devices, which are regarded as the basic semiconductor devices of future power electronics applications, are important. Designing HEMT structures in different design and channel modulation is important in terms of their electronic properties. Therefore, in this thesis, the effect of gate-drain distance (Lgd) on the electronic properties of the determined structure in power devices and its characteristics such as Vbr, current voltage (Ids-Vgs) and operating resistance (Ron) at different gate intervals were determined. For the determined structure, the distance between the drain and the gate was changed between 0.8µm and 30µm, and the electronic properties were analyzed in terms of channel modulation using the finite element method.