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Investigating current-voltage and luminescence properties of InAlGaAs/GaAs quantum well laser

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2004
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Abstract (EN)

ABSTRACT INVESTIGATING CURRENT- VOLTAGE AND LUMINESCENCE PROPERTIES OF InAlGaAs/GaAs QUANTUM WELL LASER Melek TUNCAY KARABULUT M. Sc. in Physics Adviser: Assoc. Prof. Dr. Asiye ULU? May 2004, 57 Pages In this work, current-voltage (I-V), electroluminescence (EL), optical power- current (L-I) properties of Ino.09Alo.17Gao.85As/GaAs single quantum well laser that is the alloy of III-V group of periodical table were investigated at room temperature. The structure was grown by metal organic chemical vapour deposition (MOCVD). At the results of I-V measurements, the threshold voltage of quantum well laser was found to be 0.85 V and the serial resistance was calculated 1.65 Q. Emission wavelength was determined around 807 nm with EL measurements. Threshold current was obtained 140.8 mA and differential quantum efficiency was calculated % 22 from L-I measurements. KEY WORDS : Quantum well laser, InAlGaAs/GaAs. COMMITTEE : Assoc. Prof. Dr. Asiye ULU? (Adviser) Asst. Prof. Dr. Şerafettin YALTKAYA Prof. Dr. Ertuğrul ARPAÇ 11

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Melek Tuncay Karabulut

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Melek Tuncay Karabulut (Master Thesis). Investigating current-voltage and luminescence properties of InAlGaAs/GaAs quantum well laser, 2004, Akdeniz University.

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