Characterization of InAs/GaSb TİP-II superlattices with current and capacitance measurements
Is this your thesis?
This record came from a bulk archive import. If it’s yours, link it to your profile.
Abstract (EN)
In this thesis, electrical performance of InAs/GaSb type-II superlattice photodiodes operating in mid infrared region have been studied and analysed. Superlattices whose InAs, GaSb layers and interface thicknesses changing in a systematic way has been chosed for device fabrication. The electrical performances of the devices has been elaborately studied by means of temperature dependent dark current, capacitance-voltage and foto-capacitance measurements. And also using results of these measurements defects and defect levels in the superlattice structures has been depicted and discussed.
Author
Erdem Yıldırım
How to Cite
Erdem Yıldırım (Master Thesis). Characterization of InAs/GaSb TİP-II superlattices with current and capacitance measurements, 2018, Anadolu University.
License
Tüm Hakları Saklıdır
This work is shared under the specified license terms.
More theses from Anadolu University
- A survey on arabesque culture in Turkish cinema between the years 1970?2000(2012)
- Comparison of Koroglu operas by Uzeyir Hacibeyli and Ahmed Adnan Saygun(2024)
- Effects of manipulative news in social media on the Z generation(2023)
- Analysis of educational problems in guinea-bissau from independence to the present within the framework of public policy(2025)
- Effects of system of least prompts on increasing frequency and diversity of pretend play in children with autism spectrum disorder (ASD)(2017)
- Representation of educational news in the media: A review of educational news in the context of critical discourse analysis(2024)