Galvanomagnetic measurements in InN ve GaInN samples

In this thesis, galvonomagnetic measurements have been made in InN and Ga_(1-x) In_x N samples. Three different sample groups have been investigated in the experiment. These samples were grown at Cornell University (USA) and Crete University (Greece) using Molecular Beam Epitaxy (MBE) growth system. Ga1-xInxN samples with indium concentration between 1?x?0.44 have been produced at Cornell University. The samples produced at Crete University; (i) bulk samples with InN thicknesses 1.08, 2.07 and 4.7 ?m, and (ii) GaN/AlN/InN heterojunction samples with InN thicknesses 0.4, 0.6 and 0.8 ? m have been investigated. Hall mobility and Hall carrier concentration measurements have been carried out as a function of temperature in the range 1.7-275 K. In the Mg?doped InN sample grown at Cornell University and bulk InN sample with 1.08 ?m InN thickness grown at Crete University, superconductivity behavior have been observed. Optic phonon energy has been determined analyzing with temperature dependence of Hall mobility and Raman measurement results. Magnetotransport measurements have been performed in the temperature range 1.8-275 K and at high magnetic field (0-11T).