Investigating optical properties of zinc doped perovskite quantum dots and GLED applications

This thesis presents a comprehensive investigation into the optical properties and device performance of cesium lead halide (CsPb(ClBr)₃) quantum dots (QDs), with a focus on the effects of zinc (Zn) doping. The study systematically examines the photoluminescence (PL) and UV-Vis absorbance spectra of Zn-doped CsPb(ClBr)₃ QDs over time, revealing the influence of doping concentration on optical stability. The findings indicate that Zn doping enhances the monodispersity and charge carrier confinement of the QDs, leading to improved PL and absorbance characteristics. Notably, the time-dependent absorbance and PL behavior underscore the importance of considering doping ratios and temporal effects for applications requiring stable optical performance. Additionally, this work explores the simulation of quantum dot light-emitting diode (QLED) devices using the OghmaNano (GPVDM) program. The study examines the impact of device parameters, such as active layer thickness and the inclusion of a hole injection layer (LiF), on key performance metrics like current-voltage characteristics, efficiency, and light emission. The results provide valuable insights for optimizing QLED device design and leveraging the capabilities of the GPVDM simulation tool. Keywords: Perovskite Quantum Dots, QLED Applications