Investigation of structural, optical and electrical properties of undoped and boron doped indium oxide films growth by spray prolysis technique

Indium oxide films with undoped and boron doped were produced by spray pyrolysis method at a substrate temperature of 380 °C on the glass substrate using boric acid (H3BO3) as the dopant source. The effects of doping concentration on the features of undoped and boron doped In2O3 films have been investigated. The XRD analyses indicate that all films are polycrystalline with cubic structure, which is the dominant peaks of the (222), (400), (440) and (622) reflection planes with lattice parameter, approximately 9-10 Å. When the structure doped with boron, a decrease in band gap energy occurs. This decrease continues up to 0.03 M of boron additives and tends to increase again above this value. As the boron concentration increases up to 0.03 M, the resistivity value decreases whereas the carrier concentration and Hall mobility values increase, which caused by the scattering of carriers that are severely weakened due to increased crystal quality.