Fabrication and characterization of doped metal-oxide thin film gas sensors

Tin-oxide based thin film gas sensors were produced by Electron Beam Evaporation (e-beam) method and annealed at 600oC. The structural, morphological, chemical and the electrical properties of SnO2/SiO2 thin films were studied in detail. The structural analysis were obtained by X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) was used for analyzing the morphological properties of the thin film. Also chemical bonding structures were analyzed via Fourier Transform Infrared Spectroscopy (FTIR) and electrical properties of the SnO2/SiO2 thin films were investigated by using current-voltage (I-V) characteristics measurement. Then, by using sputtering technique the Platinum (Pt) was doped onto the produced thin film in 1 second, 3seconds, and 5 seconds respectively. The same structural, morphological, chemical, and the electrical properties of the Pt doped thin films were investigated and discussed. Finally, the Oxygen sensing property of the each fabricated SnO2/SiO2 thin films and the effect of Pt doping on gas sensitivity were investigated and discussed in this study.