The structural and optical properties of CdO compounds produced by chemical spray pyrolysis technique

In this study, undoped and CdO semiconductor films doped with different fluorine concentrations (at %2, %4, %6 and %8) were produced at 250 ? substrate temperature on the glass substrates by the chemical spray pyrolysis technique. The effect of F doping on the structural and optical properties of CdO semiconductor films has been investigated. The thicknesses of produced semiconductor thin films were changed between 0.078 µm and 0.150 µm. It was seen that CdO:F films have the direct band gap and the forbidden energy band gap values of these films were changed between 2.60 and 3.40 eV by using optical technique.It was determined that the films were formed in the polycrystalline and face centered cubic structure by X-ray diffraction spectra. a lattice constants, the grain sizes and the dislocation densities of undoped and F-doped CdO thin films were calculated as between 4.68514 ? and 4.7067 ?, between 215 ? and 265 ? and between 1.41863×10-3 (nm)-2 and 2.16132×10-3 (nm)-2 by using the x-ray diffraction patterns, respectively.